Superconductivity and topological quantum states are two frontier fields ofresearch in modern condensed matter physics. The realization ofsuperconductivity in topological materials is highly desired, however,superconductivity in such materials is typically limited to two- orthree-dimensional materials and is far from being thoroughly investigated. Inthis work, we boost the electronic properties of the quasi-one-dimensionaltopological insulator bismuth iodide \b{eta}-Bi4I4 by applying high pressure.Superconductivity is observed in \b{eta}-Bi4I4 for pressures where thetemperature dependence of the resistivity changes from a semiconducting-likebehavior to that of a normal metal. The superconducting transition temperatureTc increases with applied pressure and reaches a maximum value of 6 K at 23GPa, followed by a slow decrease. Our theoretical calculations suggest thepresence of multiple pressure-induced topological quantum phase transitions aswell as a structural-electronic instability.
展开▼
机译:超导和拓扑量子态是现代凝聚态物理研究的两个前沿领域。在拓扑材料中实现超导性是非常需要的,但是,这种材料中的超导性通常仅限于二维材料,并且尚待深入研究。在这项工作中,我们通过施加高压来提高准一维拓扑绝缘体碘化铋\ b {eta} -Bi4I4的电子性能。在\ b {eta} -Bi4I4中观察到电阻率随温度变化的压力下的超导性从类似半导体的行为到普通金属的行为。超导转变温度Tc随着施加的压力而增加,在23GPa时达到最大值6 K,然后缓慢降低。我们的理论计算表明存在多个压力诱导的拓扑量子相变以及结构电子不稳定性。
展开▼